Highly mismatched III–V semiconductor alloys applied in multiple quantum well photovoltaics

Origin of the large band-gap bowing in highly mismatched semiconductor alloys

Valence-band anticrossing in mismatched III-V semiconductor alloys

K. Alberi,1,2 J. Wu,1,2 W. Walukiewicz,1 K. M. Yu,1 O. D. Dubon,1,2 S. P. Watkins,3 C. X. Wang,3 X. Liu,4 Y.-J. Cho,4 and J. Furdyna4 1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 2Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA 3Department of Physics, Simon Fraser University, Burna...

Dipole scattering in highly polar semiconductor alloys

The wide gap polar semiconductors III-V nitrides, II-VI oxides, and ferroelectrics exhibit large spontaneous and piezoelectric polarization due to their nonsymmetric crystal structures. Electrical conductivity in alloys of such crystals is degraded by scattering from the varying polarization coupled to alloy disorder. We have modeled this effect by dipole scattering. We have calculated dipole s...

Persistent photoconductivity in IIVI and IIIV semiconductor alloys and a novel infrared detector

Exciton condensate in semiconductor quantum well structures.

We propose that the exciton condensate may form in a well-controlled way in appropriately arranged semiconductor quantum well structures. The mean-field theory of Keldysh and Kopaev, exact in both the high density and the low density limits, is solved numerically to illustrate our proposal. The electron-hole pairing gap and the excitation spectrum of the exciton condensate are obtained. The ene...